Avalanche-Discharge-Induced Electrical Forming in Tantalum Oxide-Based Metal-Insulator-Metal Structures-Reference-Cited by-同舟云学术

Avalanche-Discharge-Induced Electrical Forming in Tantalum Oxide-Based Metal-Insulator-Metal Structures

Published:2015-10-30 Issue:46 Volume:25 Page:7154-7162
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Skaja Katharina¹,Bäumer Christoph¹,Peters Oliver¹,Menzel Stephan¹,Moors Marco¹,Du Hongchu¹²,Bornhöfft Manuel¹²³,Schmitz Christoph¹,Feyer Vitaliy¹,Jia Chun-Lin¹²,Schneider Claus Michael¹⁴,Mayer Joachim²³,Waser Rainer¹⁵,Dittmann Regina¹

Affiliation:

1. Peter Grünberg Institut; Forschungszentrum Jülich; 52425 Jülich Germany

2. Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons; Forschungszentrum Jülich; 52425 Jülich Germany

3. Central Facility for Electron Microscopy; RWTH Aachen University; 52056 Aachen Germany

4. Faculty of Physics; University of Duisburg; 47048 Duisburg Germany

5. Institute of Materials in Electrical Engineering and Information Technology II; RWTH Aachen University; 52056 Aachen Germany

Funder

Deutsche Forschungsgemeinschaft

W2/W3 program of the Helmholtz association

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201502767/fullpdf

Reference57 articles.

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3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. Memristive switching mechanism for metal/oxide/metal nanodevices

5. Resistance switching in HfO2 metal-insulator-metal devices

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