Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport-Reference-Cited by-同舟云学术

Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport

Published:2017-02-10 Issue:12 Volume:27 Page:1605614
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Kim Jeong Dong¹,Mohseni Parsian K.¹²,Balasundaram Karthik¹,Ranganathan Srikanth³,Pachamuthu Jayavel³,Coleman James J.⁴,Li Xiuling¹⁵

Affiliation:

1. Department of Electrical and Computer Engineering Micro and Nanotechnology Laboratory Materials Research Laboratory University of Illinois at Urbana–Champaign IL 61801 USA

2. Microsystems Engineering Rochester Institute of Technology Rochester NY 14623 USA

3. SanDisk a Western Digital Brand Milpitas CA 95035 USA

4. Department of Electrical Engineering and Department of Materials Science University of Texas at Dallas Richardson TX 75080 USA

5. International Institute for Carbon‐Neutral Energy Research (I2CNER) Kyushu University Fukuoka 819‐0395 Japan

Funder

National Science Foundation

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201605614

Reference39 articles.

1. Metal-assisted chemical etching in HF/H2O2 produces porous silicon

2. Metal assisted chemical etching for high aspect ratio nanostructures: A review of characteristics and applications in photovoltaics

3. Metal-Assisted Chemical Etching of Silicon: A Review

4. Metal-assisted chemical etching of silicon and nanotechnology applications

5. GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching

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