High-Performance Dopamine Sensors Based on Whole-Graphene Solution-Gated Transistors-Reference-Cited by-同舟云学术

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High-Performance Dopamine Sensors Based on Whole-Graphene Solution-Gated Transistors

Published:2013-11-18 Issue:7 Volume:24 Page:978-985
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zhang Meng¹,Liao Caizhi¹,Yao Yanli¹,Liu Zhike¹,Gong Fengfei²,Yan Feng¹

Affiliation:

1. Department of Applied Physics and Materials Research Centre; The Hong Kong Polytechnic University; Hong Kong China

2. School of Finance and Statistics; East China Normal University; 500 Dongchuan Road Shanghai 200241 China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference54 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Biological and chemical sensors based on graphene materials

3. Selective Gas Sensing with a Single Pristine Graphene Transistor

4. Solution-Gated Graphene Field Effect Transistors Integrated in Microfluidic Systems and Used for Flow Velocity Detection

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