Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization-Reference-Cited by-同舟云学术

Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization

Published:2018-11-14 Issue:2 Volume:29 Page:1806460
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zhong Hai¹²,Wen Yan²,Zhao Yuelei²,Zhang Qiang²,Huang Qikun¹,Chen Yanxue¹,Cai Jianwang³,Zhang Xixiang²,Li Run-wei⁴,Bai Lihui¹,Kang Shishou¹,Yan Shishen¹⁵^ORCID,Tian Yufeng¹^ORCID

Affiliation:

1. School of Physics; State Key Laboratory of Crystal Materials; Shandong University; Jinan 250100 China

2. Physical Science and Engineering (PSE); King Abdullah University of Science and Technology (KAUST); Thuwal 239955 Kingdom of Saudi Arabia

3. Beijing National Laboratory for Condensed Matter Physics; Institute of Physics; Chinese Academy of Sciences; Beijing 100190 China

4. Key Laboratory of Magnetic Materials and Devices; Ningbo Institute of Materials Technology and Engineering; Chinese Academy of Sciences; Ningbo 315201 China

5. Spintronics Institute; University of Jinan; Jinan 250022 China

Funder

National Natural Science Foundation of China

National Basic Research Program of China

King Abdullah University of Science and Technology

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201806460/fullpdf

Reference28 articles.