MoS 2 /MoTe 2 Heterostructure Tunnel FETs Using Gated Schottky Contacts-Reference-Cited by-同舟云学术

MoS 2 /MoTe 2 Heterostructure Tunnel FETs Using Gated Schottky Contacts

Published:2019-11-04 Issue:4 Volume:30 Page:1905970
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Balaji Yashwanth¹²^ORCID,Smets Quentin¹^ORCID,Śzabo Áron³,Mascaro Marco¹⁴,Lin Dennis¹,Asselberghs Inge¹,Radu Iuliana¹^ORCID,Luisier Mathieu³^ORCID,Groeseneken Guido¹²^ORCID

Affiliation:

1. IMEC 3001 Leuven Belgium

2. Department of Electrical EngineeringKU Leuven 3001 Leuven Belgium

3. Integrated systems laboratoryETH Zurich 8092 Zurich Switzerland

4. Department of Physics and AstronomyKU Leuven 3001 Leuven Belgium

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201905970

Reference35 articles.

1. Electronics based on two-dimensional materials

2. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

3. Tunnel field-effect transistors as energy-efficient electronic switches

4. Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors

5. Charge Transport in MoS2/WSe2 van der Waals Heterostructure with Tunable Inversion Layer

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