Correlated Lattice Instability and Emergent Charged Domain Walls at Oxide Heterointerfaces-Reference-Cited by-同舟云学术

Correlated Lattice Instability and Emergent Charged Domain Walls at Oxide Heterointerfaces

Published:2019-09-26 Issue:49 Volume:29 Page:1906655
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Li Mengsha¹,Huang Zhen²,Tang Chunhua¹,Song Dongsheng²,Mishra Tara Prasad¹³,Ariando Ariando²,Venkatesan Thirumalai²,Li Changjian¹^ORCID,Pennycook Stephen J.¹²³

Affiliation:

1. Department of Materials Science and EngineeringNational University of Singapore Singapore 117575 Singapore

2. NUSNNI‐NanocoreNational University of Singapore Singapore 117411 Singapore

3. Singapore‐MIT Alliance for Research and Technology 1 CREATE Way, #10‐01 CREATE Tower Singapore 138602 Singapore

Funder

National Research Foundation Singapore

Agency for Science, Technology and Research

National University of Singapore

Ministry of Education - Singapore

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201906655

Reference46 articles.

1. Hall effect in charged conducting ferroelectric domain walls

2. Free-electron gas at charged domain walls in insulating BaTiO3

3. Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects

4. Conduction at domain walls in oxide multiferroics

5. Functional electronic inversion layers at ferroelectric domain walls

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