Long‐Term Structural Evolution of an Intercalated Layered Semiconductor-Reference-Cited by-同舟云学术

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Long‐Term Structural Evolution of an Intercalated Layered Semiconductor

Published:2017-03 Issue:14 Volume:27 Page:1605038
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Chew Annabel R.¹,Fonseca Jose J.²³,Dubon Oscar D.²³,Salleo Alberto¹

Affiliation:

1. Department of Materials Science and Engineering Stanford University Stanford CA 94305 USA

2. Department of Materials Science and Engineering University of California Berkeley CA 94720 USA

3. Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA

Funder

National Science Foundation

U.S. Department of Energy

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201605038

Reference27 articles.

1. Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides

2. Flexible photodetectors with single-crystalline GaTe nanowires

3. High-performance flexible photodetectors based on GaTe nanosheets

4. Layered GaTe Crystals for Radiation Detectors

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving the Efficiency of Gallium Telluride for Photocatalysis, Electrocatalysis, and Chemical Sensing through Defects Engineering and Interfacing with its Native Oxide;Advanced Functional Materials;2022-08-07

2. Breaking the Cut‐Off Wavelength Limit of GaTe through Self‐Driven Oxygen Intercalation in Air;Advanced Science;2021-12-30

3. Dual phase two-color emission observed in van der Waals GaTe planes;Applied Surface Science;2021-03

4. The Study of Optical Properties of III 2 –VI 3 Defect Semiconductor Group Compounds Ga 2 S 3 , Ga 2 Se 3 , In 2 S 3 , and In 2 Se 3;Advanced Photonics Research;2021-02-04

5. Nanowire Grid Polarization and Polarized Excitonic Emission Observed in Multilayer GaTe;The Journal of Physical Chemistry Letters;2020-01-06

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