The Study of Optical Properties of III 2 –VI 3 Defect Semiconductor Group Compounds Ga 2 S 3 , Ga 2 Se 3 , In 2 S 3 , and In 2 Se 3
Author:
Affiliation:
1. Graduate Institute of Applied Science and Technology National Taiwan University of Science and Technology Taipei 106 Taiwan
2. Department of Electrical Engineering National Taiwan Ocean University Keelung 202 Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/adpr.202000110
Reference61 articles.
1. Electric Field Effect in Atomically Thin Carbon Films
2. Single-layer MoS2 transistors
3. Interplay Between Cr Dopants and Vacancy Clustering in the Structural and Optical Properties of WSe2
4. Synthesis and Transport Properties of Degenerate P-Type Nb-Doped WS2 Monolayers
5. Complete-series excitonic dipole emissions in few layer ReS2 and ReSe2 observed by polarized photoluminescence spectroscopy
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