Spatially Resolved Electric-Field Manipulation of Magnetism for CoFeB Mesoscopic Discs on Ferroelectrics-Reference-Cited by-同舟云学术

Spatially Resolved Electric-Field Manipulation of Magnetism for CoFeB Mesoscopic Discs on Ferroelectrics

Published:2018-01-17 Issue:11 Volume:28 Page:1706448
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Ba You¹²,Liu Yan¹²³,Li Peisen¹²⁴,Wu Liang⁵,Unguris John⁶,Pierce Daniel T.⁶,Yang Danni⁷,Feng Ce¹²,Zhang Yike¹²,Wu Hao⁸,Li Dalai⁸,Chang Yuansi⁸,Zhang Jinxing⁷,Han Xiufeng⁸,Cai Jianwang⁸,Nan Ce-Wen⁵,Zhao Yonggang¹²^ORCID

Affiliation:

1. Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics; Tsinghua University; Beijing 100084 China

2. Collaborative Innovation Center of Quantum Matter; Beijing 100084 China

3. Key Laboratory of Space Utilization; Technology and Engineering Center for Space Utilization; Chinese Academy of Sciences; Beijing 100094 China

4. College of Mechatronics and Automation; National University of Defense Technology; Changsha 410073 China

5. School of Materials Science and Engineering and State Key Lab of New Ceramics and Fine Processing; Tsinghua University; Beijing 100084 China

6. Center for Nanoscale Science and Technology; National Institute of Standards and Technology; Gaithersburg MD 20899 USA

7. Department of Physics; Beijing Normal University; Beijing 100875 China

8. Beijing National Laboratory for Condensed Matter Physics; Institute of Physics; Chinese Academy of Sciences; Beijing 100190 China

Funder

Science Center of National Science Foundation of China

973 project of the Ministry of Science and Technology of China

National Natural Science Foundation of China

State Key Laboratory of Low-Dimensional Quantum Physics

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference51 articles.

1. The Renaissance of Magnetoelectric Multiferroics

2. High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

3. Electric Field Manipulation of Magnetization Rotation and Tunneling Magnetoresistance of Magnetic Tunnel Junctions at Room Temperature

4. Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials

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