Redox Reactions at Cu,Ag/Ta2O5Interfaces and the Effects of Ta2O5Film Density on the Forming Process in Atomic Switch Structures-Reference-Cited by-同舟云学术

Redox Reactions at Cu,Ag/Ta2O5Interfaces and the Effects of Ta2O5Film Density on the Forming Process in Atomic Switch Structures

Published:2015-06-01 Issue:40 Volume:25 Page:6374-6381
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Tsuruoka Tohru¹²,Valov Ilia³⁴,Tappertzhofen Stefan⁴,van den Hurk Jan⁴,Hasegawa Tsuyoshi¹²,Waser Rainer³⁴,Aono Masakazu¹

Affiliation:

1. International Center for Materials Nanoarchitectonics (WPI-MANA); National Institute for Materials Science (NIMS); 1-1 Namiki Tsukuba 305-0044 Japan

2. Core Research for Evolutional Science and Technology (CREST); Japan Science and Technology Agency (JST); 5 Sanbancho, Chiyoda-ku Tokyo 102-0075 Japan

3. Peter Gruenberg Institute (Electric Materials); Forschungszentrum Jülich; 52425 Jülich Germany

4. Institut für Werkstoffe der Elektrotecknik 2 (IWE2); RWTH Aachen; 52074 Aachen Germany

Funder

JSPS KAKENHI

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201500853/fullpdf

Reference26 articles.

1. Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta2O5 atomic switch

2. Nanoionics-based resistive switching memories

3. Electrochemical metallization memories—fundamentals, applications, prospects

4. Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

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