Fabrication of a Cu-Cone-Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability-Reference-Cited by-同舟云学术

Fabrication of a Cu-Cone-Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability

Published:2019-01-04 Issue:8 Volume:29 Page:1806278
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Kim Hae Jin¹,Park Tae Hyung¹,Yoon Kyung Jean¹,Seong Won Mo¹,Jeon Jeong Woo¹,Kwon Young Jae¹,Kim Yumin¹,Kwon Dae Eun¹,Kim Gil Seop¹,Ha Tae Jung²,Kim Soo Gil²,Yoon Jung Ho¹,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center; Seoul National University; Gwanak-ro 1, Daehag-dong Gwanak-gu Seoul 151-744 Republic of Korea

2. SK Hynix Inc.; 2091 Gyeongchung-daero, Bubal-eub Icheon-si Gyeonggi-do 467-734 Republic of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201806278/fullpdf

Reference58 articles.

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3. Conductive bridging random access memory—materials, devices and applications

4. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

5. An artificial nociceptor based on a diffusive memristor

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