Excellent R off /R on ratio and short programming time in Cu/Al2 O3 -based conductive-bridging RAM under low-current (10 μA) operation

Author:

Belmonte Attilio12,Fantini Andrea1,Redolfi Augusto1,Houssa Michel2,Jurczak Malgorzata1,Goux Ludovic1

Affiliation:

1. imec; Kapeldreef 75, 3001 Leuven Belgium

2. Department of Physics and Astronomy; KU Leuven; Celestijnenlaan 200D, 3001 Leuven Belgium

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Electrochemical metallization memories—fundamentals, applications, prospects

2. J. R. Jameson P. Blanchard C. Cheng J. Dinh A. Gallo V. Gopalakrishnan C. Gopalan B. Guichet S. Hsu D. Kamalanathan D. Kim F. Koushan M. Kwan K. Law D. Lewis Y. Ma V. McCaffrey S. Park S. Puthenthermadam E. Runnion J. Sanchez J. Shields K. Tsai A. Tysdal D. Wang R. Williams M. N. Kozicki J. Wang V. Gopinath S. Hollmer M. Van Buskirk 738 741 2013

3. A Thermally Stable and High-Performance 90-nm ${\rm Al}_{2}{\rm O}_{3}\backslash{\rm Cu}$-Based 1T1R CBRAM Cell

4. Total Ionizing Dose Retention Capability of Conductive Bridging Random Access Memory

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