Beryllium-Assisted p-Type Doping for ZnO Homojunction Light-Emitting Devices-Reference-Cited by-同舟云学术

Beryllium-Assisted p-Type Doping for ZnO Homojunction Light-Emitting Devices

Published:2016-03-29 Issue:21 Volume:26 Page:3696-3702
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Chen Anqi¹,Zhu Hai¹,Wu Yanyan¹,Chen Mingming²,Zhu Yuan¹,Gui Xuchun¹,Tang Zikang¹³

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies; School of Physics and Enineering; Sun Yat-Sen University; Guangzhou 510275 China

2. Faculty of Science; Jiangsu University; Jiangsu 212013 China

3. The Institute of Applied Physics and Materials Engineering; University of Macau; Avenida da Universidade; Taipa Macau

Funder

National Natural Science Foundation of China

National Key Basic Research Program of China

Unversity of Macau

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference44 articles.

1. Nitride-based semiconductors for blue and green light-emitting devices

2. Prospects for LED lighting

3. Evening exposure to a light-emitting diodes (LED)-backlit computer screen affects circadian physiology and cognitive performance

4. Blue light from light-emitting diodes elicits a dose-dependent suppression of melatonin in humans

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