Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN-Reference-Cited by-同舟云学术

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Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN

Published:2019-07-04 Issue:36 Volume:29 Page:1902608
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Wang Ping¹^ORCID,Wang Tao¹²,Wang Hui¹,Sun Xiaoxiao¹,Huang Pu¹,Sheng Bowen¹,Rong Xin¹,Zheng Xiantong¹,Chen Zhaoying¹,Wang Yixin¹,Wang Ding¹,Liu Huapeng¹,Liu Fang¹,Yang Liuyun¹,Li Duo¹,Chen Ling¹,Yang Xuelin¹,Xu Fujun¹,Qin Zhixin¹,Shi Junjie¹,Yu Tongjun¹,Ge Weikun¹,Shen Bo¹³⁴,Wang Xinqiang¹³⁴

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of PhysicsPeking University Beijing 100871 P. R. China

2. Electron Microscopy LaboratorySchool of PhysicsPeking University Beijing 100871 P. R. China

3. Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China

4. Nano‐optoelectronics Frontier Center of Ministry of Education (NFC‐MOE)Peking University Beijing 100871 P. R. China

Funder

Science Challenge Project

National Natural Science Foundation of China

NSAF Joint Fund

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201902608

Reference58 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

3. AlGaN/GaN HEMTs-an overview of device operation and applications

4. Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire

5. Room-Temperature Triggered Single Photon Emission from a III-Nitride Site-Controlled Nanowire Quantum Dot

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