Sensitive and Ultrabroadband Phototransistor Based on Two‐Dimensional Bi 2 O 2 Se Nanosheets

Author:

Tong Tong1ORCID,Chen Yunfeng2,Qin Shuchao13,Li Weisheng1,Zhang Junran1,Zhu Chunhui1ORCID,Zhang Chunchen4,Yuan Xiao1,Chen Xiaoqing1,Nie Zhonghui1,Wang Xinran1,Hu Weida2,Wang Fengqiu1,Liu Wenqing5,Wang Peng4,Wang Xuefeng1,Zhang Rong1,Xu Yongbing16

Affiliation:

1. National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic MaterialsSchool of Electronic Science and EngineeringNanjing University Nanjing 210023 China

2. State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences 500 Yutian Road Shanghai 200083 China

3. Key Laboratory of Optical Communication Science and Technology of Shandong Province School of Physical Science and Information EngineeringLiaocheng University Liaocheng 252059 China

4. National Laboratory of Solid State MicrostructuresCollege of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced MicrostructuresNanjing University Nanjing 210023 China

5. Department of Electronic EngineeringRoyal HollowayUniversity of London Egham Surrey TW20 0EX UK

6. York‐Nanjing Joint Center in SpintronicsDepartment of Electronic Engineering and Department of PhysicsThe University of York York YO10 5DD UK

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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