Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches-Reference-Cited by-同舟云学术

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Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches

Published:2014-07-09 Issue:35 Volume:24 Page:5522-5529
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Sharma Abhishek A.¹,Noman Mohammad¹,Abdelmoula Mohamed²,Skowronski Marek²,Bain James A.¹

Affiliation:

1. Electrical & Computer Engineering Department; Carnegie Mellon University; 5000 Forbes Ave. Pittsburgh PA 15213 USA

2. Materials Science & Engineering Department; Carnegie Mellon University; 5000 Forbes Ave. Pittsburgh PA 15213 USA

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. Nanoionics-based resistive switching memories

2. Reproducible resistance switching in polycrystalline NiO films

3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. High switching endurance in TaOx memristive devices

5. Who Wins the Nonvolatile Memory Race?

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