Quantifying the Energy Barriers and Elucidating the Charge Transport Mechanisms across Interspherulite Boundaries in Solution-Processed Organic Semiconductor Thin Films-Reference-Cited by-同舟云学术

Quantifying the Energy Barriers and Elucidating the Charge Transport Mechanisms across Interspherulite Boundaries in Solution-Processed Organic Semiconductor Thin Films

Published:2015-08-12 Issue:35 Volume:25 Page:5662-5668
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Hailey Anna K.¹,Wang Szu-Ying²,Chen Yuanzhen³,Payne Marcia M.⁴,Anthony John E.⁴,Podzorov Vitaly³,Loo Yueh-Lin¹

Affiliation:

1. Department of Chemical Engineering; Princeton University; Princeton NJ 08544 USA

2. Department of Chemistry and Chemical Biology; Rutgers University; Piscataway NJ 08854 USA

3. Department of Physics and Astronomy; Rutgers University; Piscataway NJ 08854 USA

4. Department of Chemistry; University of Kentucky; Lexington KY 40506 USA

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Modeling of charge transport in polycrystalline sexithiophene from quantum charge transfer rate theory beyond the first-order perturbation

2. Electronic States at Low-Angle Grain Boundaries in Polycrystalline Naphthalene

3. The overall device resistance in organic thin film transistor: Application to octithiophene (8T)

4. Influence of grain sizes on the mobility of organic thin-film transistors

5. Intrinsic Charge Trapping in Organic and Polymeric Semiconductors: A Physical Chemistry Perspective

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