Passivation of Molecular n-Doping: Exploring the Limits of Air Stability-Reference-Cited by-同舟云学术

Passivation of Molecular n-Doping: Exploring the Limits of Air Stability

Published:2016-03-03 Issue:21 Volume:26 Page:3730-3737
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Tietze Max L.¹²,Rose Bradley D.¹,Schwarze Martin²,Fischer Axel²,Runge Steffen³,Blochwitz-Nimoth Jan³,Lüssem Björn⁴,Leo Karl¹²,Brédas Jean-Luc¹

Affiliation:

1. Solar & Photovoltaics Engineering Research Center (SPERC); King Abdullah University of Science and Technology (KAUST); Thuwal 23955-6900 Saudi Arabia

2. Institut für Angewandte Photophysik (IAPP); Technische Universität Dresden; George-Bähr-Straße 1 01069 Dresden Germany

3. Novaled GmbH; Tatzberg 49 01307 Dresden Germany

4. Department of Physics; Kent State University; Kent OH 44242 USA

Funder

King Abdullah University of Science and Technology

European Community's Seventh Framework Programme

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201505092/fullpdf

Reference53 articles.

1. Doped organic transistors operating in the inversion and depletion regime

2. Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

3. Top-gate organic depletion and inversion transistors with doped channel and injection contact

4. Stability of n-type doped conducting polymers and consequences for polymeric microelectronic devices

5. A Molecular Copper Catalyst for Electrochemical Water Reduction with a Large Hydrogen-Generation Rate Constant in Aqueous Solution

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