Rear‐Passivated Ultrathin Cu(In,Ga)Se2Films by Al2O3Nanostructures Using Glancing Angle Deposition Toward Photovoltaic Devices with Enhanced Efficiency-Reference-Cited by-同舟云学术

Rear‐Passivated Ultrathin Cu(In,Ga)Se2Films by Al2O3Nanostructures Using Glancing Angle Deposition Toward Photovoltaic Devices with Enhanced Efficiency

Published:2019-09-25 Issue:48 Volume:29 Page:1905040
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Chen Chia‐Wei¹²,Tsai Hung‐Wei¹²,Wang Yi‐Chung¹²,Shih Yu‐Chuan¹²,Su Teng‐Yu¹²,Yang Chen‐Hua¹²,Lin Wei‐Sheng¹²,Shen Chang‐Hong³,Shieh Jia‐Ming³,Chueh Yu‐Lun¹²^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Frontier Research Center on Fundamental and Applied Sciences of MattersNational Tsing Hua University Hsinchu 30013 Taiwan Republic of China

2. Department of PhysicsNational Sun Yat‐Sen University Kaohsiung 80424 Taiwan Republic of China

3. Taiwan Semiconductor Research Institute No. 26, Prosperity Road1 Hsinchu 30078 Taiwan Republic of China

Funder

Ministry of Science and Technology, Taiwan

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201905040

Reference54 articles.

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