Patterned Growth of P‐Type MoS 2 Atomic Layers Using Sol–Gel as Precursor-Reference-Cited by-同舟云学术

Patterned Growth of P‐Type MoS 2 Atomic Layers Using Sol–Gel as Precursor

Published:2016-07-19 Issue:35 Volume:26 Page:6371-6379
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zheng Wei¹²,Lin Junhao³⁴,Feng Wei¹²,Xiao Kai⁵,Qiu Yunfeng¹,Chen XiaoShuang¹,Liu Guangbo¹,Cao Wenwu⁵,Pantelides Sokrates T.³⁴,Zhou Wu⁴,Hu PingAn¹²

Affiliation:

1. Key Laboratory of Micro‐systems and Micro‐structures Manufacturing of Ministry of Education Harbin Institute of Technology Harbin 150080 P. R. China

2. School of Materials Science and Engineering Harbin Institute of Technology Harbin 150080 P. R. China

3. Department of Physics and Astronomy Vanderbilt University Nashville TN 37235 USA

4. Materials Science & Technology Division Oak Ridge National Laboratory Oak Ridge TN 37831 USA

5. Center for Nanophase Materials Sciences Oak Ridge National Laboratory One Bethel Valley Road Oak Ridge TN 37831 USA

Funder

National Natural Science Foundation of China

U.S. Department of Energy

Office of Science

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201602494

Reference45 articles.

1. Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating

2. Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

3. Low-temperature photocarrier dynamics in monolayer MoS2

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides

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