Enhanced Opto‐Electrical Properties of Chalcogenide‐Rich Tin Selenide Thin Film after Incorporating Sulfur Yielding Tin Sulfoselenide

Abstract

AbstractAlloy engineering are efficient methods to improve the physical properties of two‐dimensional (2D) material‐based photovoltaic application. Tin chalcogenide belonging to layered structured semiconducting family has been a significant compound due to its outstanding characteristics. Tin selenide (SnSe) is known as promising layered compound to develop 2D materials for optoelectronic devices. The current study focused onto the effect of tin sulfoselenide (SnSSe) alloy engineering on the structural, morphological, optical, and electrical characteristics. X‐ray Diffraction (XRD) confirmed that SnSSe and SnSe are exist in the orthorhombic crystal structure phase without other secondary phases, with the preferred high‐intensity peak along (111) oriented plane. Raman spectra was reported to give information about the vibrational characteristics of the compounds. The presence of Sulfur ion in SnSSe was further confirmed by Energy Dispersive X‐ray Spectroscopy (EDAX) and X‐ray Photoelectron Spectroscopy (XPS) analysis. Bandgap energy (Eg) has been analysed by Tauc's plot and the derivative of transmittance spectra. According to both sets of analyses, the bandgap of the SnSSe thin film is considerably smaller than that of the SnSe thin film. Hall measurements indicated that SnSSe exhibits the higher hole mobility. The present work‘s results offer useful insight into the prospective device applications of two‐dimensional alloy materials.