Low-temperature and effective ex situ group V doping for efficient polycrystalline CdSeTe solar cells-Reference-Cited by-同舟云学术

Low-temperature and effective ex situ group V doping for efficient polycrystalline CdSeTe solar cells

Published:2021-06-24 Issue:7 Volume:6 Page:715-722
ISSN:2058-7546
Container-title:Nature Energy
language:en
Short-container-title:Nat Energy

Author:

Li Deng-Bing^ORCID,Yao Canglang,Vijayaraghavan S. N.^ORCID,Awni Rasha A.^ORCID,Subedi Kamala K.,Ellingson Randy J.,Li Lin,Yan Yanfa^ORCID,Yan Feng^ORCID

Funder

United States Department of Defense | United States Air Force | AFMC | Air Force Research Laboratory

National Science Foundation

National Aeronautics and Space Administration

U.S. Department of Energy

Publisher

Springer Science and Business Media LLC

Subject

Energy Engineering and Power Technology,Fuel Technology,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://www.nature.com/articles/s41560-021-00848-z.pdf

Reference52 articles.

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2. Grover, S. et al. Characterization of arsenic doped CdTe layers and solar cells. In Proc. 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) 1193–1195 (IEEE, 2017).

3. Leading the World’s Sustainable Energy Future (First Solar, 2019); http://www.firstsolar.com/-/media/First-Solar/Documents/Corporate-Collaterals/FS_Corporate_Factsheet.ashx

4. Burst, J. M. et al. CdTe solar cells with open-circuit voltage breaking the 1 V barrier. Nat. Energy 1, 16015 (2016).

5. Metzger, W. K. et al. Exceeding 20% efficiency with in situ group V doping in polycrystalline CdTe solar cells. Nat. Energy 4, 837–845 (2019).

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