Low-Temperature MOCVD of Crystalline Ga2O3Nanowires usingtBu3Ga-Reference-Cited by-同舟云学术

Low-Temperature MOCVD of Crystalline Ga2O3Nanowires usingtBu3Ga

Published:2013-11-06 Issue:10-11-12 Volume:19 Page:347-354
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Schulz Stephan¹,Bendt Georg¹,Assenmacher Wilfried²,Sager Daniel³,Bacher Gerd³

Affiliation:

1. University of Duisburg-Essen; Institute of Inorganic Chemistry and Center for Nanointegration Duisburg-Essen (CENIDE) Universitätsstr. 5-7; 45117 Essen (Germany)

2. Institute of Inorganic Chemistry; University of Bonn Römerstr. 164; 53117 Bonn (Germany)

3. Werkstoffe der Elektrotechnik and Center for Nanointegration Duisburg-Essen (CENIDE); University of Duisburg-Essen Bismarckstraße 81; BA 47057 Duisburg (Germany)

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/cvde.201307060/fullpdf

Reference67 articles.

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5. Some observations on the photoluminescence of doped β-galliumsesquioxide

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