Thin a-SiC:H Films Formed by Remote Hydrogen Microwave Plasma CVD using Dimethylsilane and Trimethylsilane Precursors-Reference-Cited by-同舟云学术

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Thin a-SiC:H Films Formed by Remote Hydrogen Microwave Plasma CVD using Dimethylsilane and Trimethylsilane Precursors

Published:2014-04-29 Issue:4-5-6 Volume:20 Page:112-117
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Wróbel Aleksander M.¹,Walkiewicz-Pietrzykowska Agnieszka¹,Uznanski Pawel¹

Affiliation:

1. Centre of Molecular and Macromolecular Studies; Polish Academy of Sciences; Sienkiewicza 112, PL-90-363 Lodz (Poland)

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/cvde.201304325/fullpdf

Reference24 articles.

1. Selective effect of ion/surface interaction in low frequency PACVD of SIC:H films: Part B. Microstructural study

2. Comparison between single and multilayered a-SiC:H coatings prepared by multi-frequency PACVD: Mechanical properties

3. Corrosion and tribo-corrosion behavior of a-SiCx:H, a-SiNx:H and a-SiCxNy:H coatings on SS301 substrate

4. Structural, mechanical, tribological, and corrosion properties of a-SiC:H coatings prepared by PECVD

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane;Heliyon;2023-08

2. Low-energy oxygen ion beam induced chemical vapor deposition using methylsilane or dimethylsilane for the formation of silicon dioxide films;Thin Solid Films;2022-10

3. Low-energy Ar+ ion beam induced chemical vapor deposition of silicon carbide films using dimethylsilane;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2022-09

4. Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane;Electronic Materials;2022-01-10

5. Production of low-energy SiCH3+ and SiC2H7+ ion beams for 3C-SiC film formation by selecting fragment ions from dimethylsilane;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-01

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