MOCVD of C-oriented Bi2Te3Films on SiO2Substrates using Triethyl Bismuth and Di-tertiarybutyl Tellurium-Reference-Cited by-同舟云学术

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MOCVD of C-oriented Bi2Te3Films on SiO2Substrates using Triethyl Bismuth and Di-tertiarybutyl Tellurium

Published:2013-02-12 Issue:1-3 Volume:19 Page:61-67
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Kang Sang-Woo,Jeon Ki-Moon,Shin Jae-Soo,Chun Je-Ran,Kim Young-Heon,Lee Sang Jun,Yun Ju-Young

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference17 articles.

1. Measurement of Thermal Conductivity Using Steady-State Isothermal Conditions and Validation by Comparison with Thermoelectric Device Performance

2. Fabrication and characterization of bismuth–telluride-based alloy thin film thermoelectric generators by flash evaporation method

3. Material science aspects of phase change optical recording

4. A Thermoelectric Power Sensor and Its Package Based on MEMS Technology

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1. Rapid growth of high-performance Bi2Te3 thin films by laser annealing at room temperature;Applied Surface Science;2023-12

2. Directly grown Te nanowire electrodes and soft plasma etching for high-performance MoTe2 field-effect transistors;Applied Surface Science;2021-11

3. Large-Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111);Crystal Growth & Design;2021-06-07

4. Methylbismuth: an organometallic bismuthinidene biradical;Chemical Science;2020

5. Controllable electrodeposition and mechanism research of nanostructured Bi2Te3 thin films with high thermoelectric properties;Applied Surface Science;2019-08

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