Dependence of Si/SnO2Heterojunction Properties on Growth Temperature and Type of Silicon**-Reference-Cited by-同舟云学术

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Dependence of Si/SnO2Heterojunction Properties on Growth Temperature and Type of Silicon**

Published:2013-09 Issue:7-8-9 Volume:19 Page:290-294
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Maleki M.¹,Rozati Seyed M.¹

Affiliation:

1. CVD Lab.; Physics Department; Faculty of Science; University of Guilan; Namjoo St.; Rasht; (Iran)

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/cvde.201207014/fullpdf

Reference20 articles.

1. A SnO2 Nanoparticle/Nanobelt and Si Heterojunction Light-Emitting Diode

2. Nanobelts of Semiconducting Oxides

3. Transparent conductors—A status review

4. Characterization of ZnO:Al thin films obtained by spray pyrolysis technique

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of precursor concentration on the optoelectronic properties of spray deposited SnO2/Si heterojunction;Materials Research Express;2019-08-02

2. Experimental study and theoretical calculation on the conductivity and stability of praseodymium doped tin oxide electrode;Electrochimica Acta;2015-01

3. Investigation of the Effect of the Substrate Position Relative to the Source on the Optoelectrical and Structural Properties of Pure Nanostructured Tin Oxide by APCVD;Chemical Vapor Deposition;2014-07-22

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