Time-of-flight secondary ion mass spectroscopic characterization of the nitrogen profile of shallow gate oxynitride thermally grown on a silicon substrate-Reference-Cited by-同舟云学术

Time-of-flight secondary ion mass spectroscopic characterization of the nitrogen profile of shallow gate oxynitride thermally grown on a silicon substrate

Published:2012-06-05 Issue:13 Volume:44 Page:1558-1564
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Zhu Lei¹,Teo H. W.¹,Ong Kenny¹,Huang Y. H.¹,Hua Y. N.¹

Affiliation:

1. GLOBALFOUNDRIES Singapore Pte. Ltd.; 60 Woodlands Industrial Park D Street 2; 738406; Singapore

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference19 articles.

1. An improvement of hot-carrier reliability in the stacked nitride-oxide gate n- and p-MISFET's

2. Effects of nitric oxide annealing of thermally grown silicon dioxide characteristics

3. High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient

4. Effectiveness of N/sub 2/O-nitrided gate oxide for high-performance CMOSFETs

5. The performance and reliability of 0.4 micron MOSFET's with gate oxynitrides grown by rapid thermal processing using mixtures of N/sub 2/O and O/sub 2/

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