Enhanced Light Extraction of Nano‐Light‐Emitting Diodes with Metal‐Clad Structure Using Vertical GaAs/GaAsP Core–Multishell Nanowires on Si Platform

Abstract

Nanometer‐scaled light sources using III–V compound semiconductor nanowires (NWs) on Si are expected as building blocks for next‐generation Si photonics, bioimaging, on‐chip microscopy, and light detection and ranging (LiDAR) techniques. This is, however, limited in a few materials systems due to complexity in integration of the vertical III–V NWs on Si and device process flow. Suppressing optical loss in the NW materials beyond the optical diffraction remains difficult in enhancing light extraction. Herein, the effect of the vertical metal‐clad architectures for the vertical nano‐light‐emitting diodes (LEDs) using GaAs/GaAsP‐related core–multishell NWs heterogeneously integrated on Si is investigated. The grown core–multishell NW is composed of a radial n‐GaAs/n‐GaAsP/p‐GaAs/p‐GaAsP double heterostructure. The vertical metal‐clad NW‐LEDs show suppression of carrier overflow effect and rapid enhancement of electrical luminescence.