Enhancing Performance of GaAs Photodiodes via Monolithic Integration of Self‐Formed Graphene Quantum Dots and Antireflection Surface Texturing-Reference-Cited by-同舟云学术

Enhancing Performance of GaAs Photodiodes via Monolithic Integration of Self‐Formed Graphene Quantum Dots and Antireflection Surface Texturing

Published:2021-01-27 Issue:3 Volume:2 Page:2000134
ISSN:2699-9293
Container-title:Advanced Photonics Research
language:en
Short-container-title:Adv Photo Res

Author:

Namiki Shunya¹,Huang Hsien-Chih¹^ORCID,Soares Julio¹,Wu Xihang¹,Kim Jeong Dong¹,Jiang Bill¹,Srikumar Vaanchit¹,Li Xiuling¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering Nick Holonyak, Jr. Micro and Nanotechnology Laboratory Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana IL 61801 USA

Funder

Division of Electrical, Communications and Cyber Systems

Division of Materials Research

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adpr.202000134

Reference52 articles.

1. Ultrahigh electron mobility in suspended graphene

2. Large-scale pattern growth of graphene films for stretchable transparent electrodes

3. Fine Structure Constant Defines Visual Transparency of Graphene

4. Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible

5. Graphene photodetectors with ultra-broadband and high responsivity at room temperature

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1. Numerical study of a near-infrared to mid-infrared perfect absorber based on tunable GaAs metamaterial;AIP Advances;2023-07-01

2. Distinct UV–Visible Responsivity Enhancement of GaAs Photodetectors via Monolithic Integration of Antireflective Nanopillar Structure and UV Absorbing IGZO Layer;Advanced Optical Materials;2022-04-15