Affiliation:
1. Thin Film Materials Research Center Korea Research Institute of Chemical Technology (KRICT) 141 Gajeong‐ro, Yuseong‐gu Daejeon 34114 Republic of Korea
Abstract
AbstractDespite the encouraging properties and research of 2D MoS2, an ongoing issue associated with the oxidative instability remains elusive for practical optoelectronic applications. Thus, in‐depth understanding of the oxidation behavior of large‐scale and homogeneous 2D MoS2 is imperative. Here the structural and chemical transformations of large‐area MoS2 multilayers by air‐annealing with altered temperature and time via combinatorial spectro‐microscopic analyses (Raman spectroscopy, X‐ray photoelectron spectroscopy, and atomic force microscopy) are surveyed. The results gave indications pertaining to temperature‐ and time‐dependent oxidation effects: i) heat‐driven elimination of redundant residues, ii) internal strain stimulated by the formation of MoO bonds, iii) deterioration of the MoS2 crystallinity, iv) layer thinning, and v) morphological transformation from 2D MoS2 layers to particles. Photoelectrical characterization of the air‐annealed MoS2 is implemented to capture the link between the oxidation behavior of MoS2 multilayers and their photoelectrical properties. The photocurrent based on MoS2 air‐annealed at 200 °C is assessed to be 4.92 µA, which is 1.73 times higher than that of pristine MoS2 (2.84 µA). The diminution in the photocurrent of the photodetector based on MoS2 air‐annealed above 300 °C in terms of the structural, chemical, and electrical conversions induced by the oxidation process is further discussed.
Funder
National Research Foundation of Korea
Subject
General Materials Science,General Chemistry
Cited by
5 articles.
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