Affiliation:
1. Department of Physics Yonsei University Seoul 03722 Republic of Korea
2. Division of Physics and Semiconductor Science Dongguk University Seoul 04620 Republic of Korea
3. Department of System Semiconductor Engineering Yonsei University Seoul 03722 Republic of Korea
Abstract
AbstractHigh‐performing 2D electrical and optical devices can be realized by forming an ideal van der Waals (vdW) metal contact with weak interactions and stable interface states. However, the methods for applying metal contacts while avoiding damage from metal deposition present challenges in realizing a uniform, stable vdW interface. To overcome this problem, this study develops a method for forming vdW contacts using a sacrificial Se buffer layer. This study explores this method by investigating the difference in the Schottky barrier height between the vdW metal contact deposited using a buffer layer, a transferred metal contact, and a conventional directly deposited metal contact using rectification and photovoltaic characteristics of a Schottky diode structure with graphite. Evidently, the Se buffer layer method forms the most stable and ideal vdW contact while preventing Fermi‐level pinning. A tungsten diselenide Schottky diode fabricated using these vdW contacts with Au and graphite as the top and bottom electrodes, respectively, exhibits excellent operation with an ideality factor of ≈1, an on/off ratio of > 107, and coherent properties. Additionally, when using only the vdW Au contact, the electrical and optical properties of the device can be minutely modulated by changing the structure of the Schottky diode.
Funder
National Research Foundation of Korea
Electronics and Telecommunications Research Institute
Subject
General Materials Science,General Chemistry
Cited by
1 articles.
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