Anisotropic Charge Transport Enabling High‐Throughput and High‐Aspect‐Ratio Wet Etching of Silicon Carbide-Reference-Cited by-同舟云学术

Anisotropic Charge Transport Enabling High‐Throughput and High‐Aspect‐Ratio Wet Etching of Silicon Carbide

Published:2022-05-26 Issue:8 Volume:6 Page:2200329
ISSN:2366-9608
Container-title:Small Methods
language:en
Short-container-title:Small Methods

Author:

Shi Dachuang¹,Chen Yun¹^ORCID,Li Zijian¹,Dong Shankun¹,Li Liyi²,Hou Maoxiang¹,Liu Huilong¹,Zhao Shenghe³,Chen Xin¹,Wong Ching‐Ping⁴,Zhao Ni³^ORCID

Affiliation:

1. State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment School of Electromechanical Engineering Guangdong University of Technology Guangzhou 510006 China

2. School of Electronic Science and Engineering Southeast University Nanjing Jiangsu 211189 China

3. Faculty of Engineering The Chinese University of Hong Kong Shatin Hong Kong 999077 China

4. School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Publisher

Wiley

Subject

General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smtd.202200329

Reference47 articles.

1. High-Performance Field Emitters Based on SiC Nanowires with Designed Electron Emission Sites

2. High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

3. Oriented Silicon Carbide Nanowires: Synthesis and Field Emission Properties

4. High-Performance Photodetectors Based on Organometal Halide Perovskite Nanonets

5. Wide-bandgap semiconductor ultraviolet photodetectors

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