Stronger Coupling of Quantum Dots in Hole Transport Layer Through Intermediate Ligand Exchange to Enhance the Efficiency of PbS Quantum Dot Solar Cells

Author:

Wei Yuyao1,Ding Chao2,Shi Guozheng13,Bi Huan1,Li Yusheng1,Li Hua1,Liu Dong1,Yang Yongge1,Wang Dandan1,Chen Shikai1,Wang Ruixiang4,Hayase Shuzi1,Masuda Taizo15,Shen Qing1ORCID

Affiliation:

1. Faculty of Informatics and Engineering The University of Electro Communications Tokyo 1828585 Japan

2. Institute of New Energy and Low‐Carbon Technology Sichuan University Chengdu 610065 P. R. China

3. Institution of Functional Nano and Soft Materials Soochow university Suzhou Jiangsu 215123 P. R. China

4. Beijing Engineering Research Centre of Sustainable Energy and Buildings Beijing University of Civil Engineering and Architecture Beijing 102616 P. R. China

5. CN development division Toyota Motor Corporation Susono Shizuoka 410‐1193 Japan

Abstract

AbstractNowadays, the extensively used lead sulfide (PbS) quantum dot (QD) hole transport layer (HTL) relies on layer‐by‐layer method to replace long chain oleic acid (OA) ligands with short 1,2‐ethanedithiol (EDT) ligands for preparation. However, the inevitable significant volume shrinkage caused by this traditional method will result in undesired cracks and disordered QD arrangement in the film, along with adverse increased defect density and inhomogeneous energy landscape. To solve the problem, a novel method for EDT passivated PbS QD (PbS‐EDT) HTL preparation using small‐sized benzoic acid (BA) as intermediate ligands is proposed in this work. BA is substituted for OA ligands in solution followed by ligand exchange with EDT layer by layer. With the new method, smoother PbS‐EDT films with more ordered and closer QD packing are gained. It is demonstrated stronger coupling between QDs and reduced defects in the QD HTL owing to the intermediate BA ligand exchange. As a result, the suppressed nonradiative recombination and enhanced carrier mobility are achieved, contributing to ≈20% growth in short circuit current density (Jsc) and a 23.4% higher power conversion efficiency (PCE) of 13.2%. This work provides a general framework for layer‐by‐layer QD film manufacturing optimization.

Publisher

Wiley

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