The influence of Büttiker probe scattering to the port behavior of nanoscale metal-oxide-semiconductor devices-Reference-Cited by-同舟云学术

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The influence of Büttiker probe scattering to the port behavior of nanoscale metal-oxide-semiconductor devices

Published:2012-03-06 Issue:6 Volume:41 Page:573-582
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Int. J. Circ. Theor. Appl.

Author:

Xiong Jian¹,Wang Gen¹,Mathis Wolfgang¹

Affiliation:

1. Institute of Theoretical Electrical Engineering; Leibniz University of Hannover; Appelstr. 9A, 30167; Hannover; Germany

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/cta.1805/fullpdf

Reference11 articles.

1. Impact of Gate Direct Tunneling Current on Circuit Performance: A Simulation Study;Choi;IEEE Transactions on Electron Devices,2001

2. Quantum Transport, quantum effects and circuit functionality of nanostructured elelctronic circuits;Mathis;International Journal of Circuit Theory and Applications,2004

3. On incorporating parasitic quantum effects in classical circuit simulations

4. A comparative study of advanced MOSFET Concepts;Wann;IEEE Transactions on Electron Devices,1996

5. nanoMOS 2.5: A Two-Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs;Ren;IEEE Transactions on Electron Devices,2003

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of electron scatterings on thermoelectric effect;Journal of Applied Physics;2012-08

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