Sn(IV) Inserted Lead‐Free Perovskite Materials (MA 3 (Bi 1− x Sn x ) 2 I 9 ) as Light Absorbers: Bandgap Engineering and Enhanced Photovoltaic Performance-Reference-Cited by-同舟云学术

Sn(IV) Inserted Lead‐Free Perovskite Materials (MA 3 (Bi 1− x Sn x ) 2 I 9 ) as Light Absorbers: Bandgap Engineering and Enhanced Photovoltaic Performance

Published:2021-12-19 Issue: Volume: Page:2100717
ISSN:2194-4288
Container-title:Energy Technology
language:en
Short-container-title:Energy Tech

Author:

Ahmad Khursheed¹,Kumar Praveen¹,Shrivastava Priya²,Mobin Shaikh M.¹³⁴^ORCID

Affiliation:

1. Department of Chemistry Indian Institute of Technology Indore Indore 453552 India

2. Centre for Research in Nanotechnology & Science Indian Institute of Technology Bombay Powai Mumbai 400076 India

3. Department of Biosciences and Bio-Medical Engineering Indian Institute of Technology Indore Indore 453552 India

4. Department of Metallurgy Engineering and Materials Science Indian Institute of Technology Indore Indore 453552 India

Funder

Board of Research in Nuclear Sciences

Publisher

Wiley

Subject

General Energy

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/ente.202100717

Reference35 articles.

1. Long-Range Balanced Electron- and Hole-Transport Lengths in Organic-Inorganic CH 3 NH 3 PbI 3

2. Graphene oxide based planar heterojunction perovskite solar cell under ambient condition

3. Organometal Halide Perovskites as Visible-Light Sensitizers for Photovoltaic Cells

4. Lead and HTM Free Stable Two‐Dimensional Tin Perovskites with Suitable Band Gap for Solar Cell Applications

5. Hydrothermally grown α-MnO2 nanorods as highly efficient low cost counter-electrode material for dye-sensitized solar cells and electrochemical sensing applications

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