Efficiency Improvement of Lead‐Free La2NiMnO6‐Based Double Perovskite Solar Cells Using Numerical Simulation

Author:

Rehman Ubaid ur1ORCID,Almufarij Rasmiah S.2,Sahar Kashaf ul3ORCID,Ashfaq Arslan4,Saad H.‐E. M. Musa5,Alsubhe Emaan6,Albeydani Ohood6,Alghamdi Shoug M.6,Mahmood Khalid4,Wang Chun‐Ming78

Affiliation:

1. School of Physics State Key Laboratory of Crystal Materials, Shandong University Jinan 250100 Shandong China

2. Department of Chemistry College of Science Princess Nourah bint Abdulrahman University P.O. Box 84428 Riyadh 11671 Saudi Arabia

3. Institute of Chemistry The Islamia University of Bahawalpur Bahawalpur 63100 Pakistan

4. Department of Physics Government College University Faisalabad 38000 Pakistan

5. Department of Physics College of Science and Arts in Al‐Muthnib Qassim University Al‐Muthnib 51931 Saudi Arabia

6. Department of Physics Faculty of Science Taibah University Yanbu 46423 Saudi Arabia

7. School of Physics State Key Laboratory of Crystal Materials Shandong University Jinan Shandong 250100 China

8. Center for Optics Research and Engineering (CORE) Key Laboratory of Laser and Infrared System of Ministry of Education Shandong University Qingdao Shandong 266237 China

Abstract

In this work, the efficiency of lead‐free La2NiMnO6 (LNMO)‐based double perovskite solar cells is optimized using solar cell capacitance simulator (SCAPS‐1D). Herein, the device performance is boosted by using different combinations of electron‐transport layers, hole‐transport layers, absorber layer thickness, acceptor doping density, acceptor defect density, and bandgap tuning, and by modifying the electron affinity. To make the device more realistic, the performance of the proposed device is carefully modified in the presence of interface defect density ≈10−13 cm−3, series resistance ≈1 Ω cm2, and shunt resistance ≈6000 Ω cm2, respectively. From the findings, the optimized device exhibits a record open‐circuit voltage = 1.23 V, short‐circuit current density = 27.18 mA cm−2, fill factor = 87.14%, and power conversion efficiency = 29.20% for FTO/SnO2/LNMO/MoO3/Au configuration. Finally, the device performance is tested under different working temperatures, and 300 K is found as the best temperature for the device.

Funder

Princess Nourah Bint Abdulrahman University

Publisher

Wiley

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