A 5.2-GHz cascade-mos 0.35-?m BiCMOS technology ultra-low-power LNA using a novel floating-body method-Reference-Cited by-同舟云学术

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A 5.2-GHz cascade-mos 0.35-?m BiCMOS technology ultra-low-power LNA using a novel floating-body method

Published:2005 Issue:5 Volume:45 Page:363-367
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Chen Hsien-Ku,Chen Hsien-Jui

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

2. RFIC's for mobile communication systems using SiGe bipolar technology

3. and A comparison of CMOS and SiGe LNAs and mixers for wireless LAN application, Proc IEEE 2001 Custom Integrated Circuits Conf, 2001, pp. 531-534.

4. Silicon technology tradeoffs for radio-frequency/mixed-signal "systems-on-a-chip"

5. A novel bipolar-MOSFET low-noise amplifier (BiFET LNA), circuit configuration, design methodology, and chip implementation

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1. A 9.8–30.1 GHz CMOS low-noise amplifier with a 3.2-dB noise figure using inductor- and transformer-based gm-boosting techniques;Frontiers of Information Technology & Electronic Engineering;2021-04

2. Design of Wideband LNA Employing Cascaded Complimentary Common Gate and Common Source Stages;IEEE Microwave and Wireless Components Letters;2017-06

3. A 4.6 GHz cascade switched biasing LC–QVCO using source-body resistor;Analog Integrated Circuits and Signal Processing;2013-09-27

4. Design of Wideband LNAs Using Parallel-to-Series Resonant Matching Network Between Common-Gate and Common-Source Stages;IEEE Transactions on Microwave Theory and Techniques;2011-09

5. Low-noise amplifiers in wireless communications: state of the art, two new wideband all-active LNAs in SiGe-BiCMOS;Analog Integrated Circuits and Signal Processing;2009-01-10

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