Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration-Reference-Cited by-同舟云学术

Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration

Published:2019-04-02 Issue: Volume: Page:
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog Photovolt Res Appl

Author:

Veinberg‐Vidal Elias¹^ORCID,Vauche Laura¹^ORCID,Medjoubi Karim¹,Weick Clément¹,Besançon Claire²,Garcia‐Linares Pablo³,Datas Alejandro³,Kaminski‐Cachopo Anne⁴,Voarino Philippe¹,Mur Pierre¹,Decobert Jean²,Dupré Cécilia¹

Affiliation:

1. CEA, LETI, LITEN, INESUniv. Grenoble Alpes F‐38000 Grenoble France

2. III‐V Lab F‐91767 Palaiseau France

3. Instituto de Energía SolarUniversidad Politécnica de Madrid 28040 Madrid Spain

4. CNRS, Grenoble INP, IMEP‐LAHCUniv. Grenoble Alpes F‐38000 Grenoble France

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.3128

Reference61 articles.

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5. Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

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