Ferro‐floating memory: Dual‐mode ferroelectric floating memory and its application to in‐memory computing-Reference-Cited by-同舟云学术

Ferro‐floating memory: Dual‐mode ferroelectric floating memory and its application to in‐memory computing

Published:2022-09-14 Issue:11 Volume:4 Page:
ISSN:2567-3165
Container-title:InfoMat
language:en
Short-container-title:InfoMat

Author:

Park Sangyong¹²,Oh Seyong³,Lee Dongyoung³,Park Jin‐Hong³⁴^ORCID

Affiliation:

1. Department of Semiconductor and Display Engineering Sungkyunkwan University Suwon Republic of Korea

2. Flash Process Architecture Team, Flash Development Team, Memory Business Samsung Electronics Company Pyeongtaek Republic of Korea

3. Department of Electrical and Computer Engineering Sungkyunkwan University (SKKU) Suwon Republic of Korea

4. SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Materials Science (miscellaneous),Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/inf2.12367

Reference65 articles.

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3. TanakaH KidoM YahashiK et al.Bit cost scalable technology with and plug process for ultra high density flash memory. Digest of Technical Papers—Symposium on VLSI Technology;2007: 14‐15.

4. 3-D NAND Technology Achievements and Future Scaling Perspectives

5. ParatK GodaA.Scaling trends in NAND flash. Technical Digest—International Electron Devices Meeting IEDM;2019: 2018‐Decem 2.1.1‐2.1.4.

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