Phase‐change memory based on matched Ge‐Te , Sb‐Te, and In‐Te octahedrons: Improved electrical performances and robust thermal stability-Reference-Cited by-同舟云学术

Phase‐change memory based on matched Ge‐Te , Sb‐Te, and In‐Te octahedrons: Improved electrical performances and robust thermal stability

Published:2021-07-22 Issue:9 Volume:3 Page:1008-1015
ISSN:2567-3165
Container-title:InfoMat
language:en
Short-container-title:InfoMat

Author:

Wang Ruobing¹²^ORCID,Song Zhitang¹²^ORCID,Song Wenxiong¹,Xin Tianjiao¹,Lv Shilong¹,Song Sannian¹²^ORCID,Liu Jun³

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro‐System and Information Technology, Chinese Academy of Sciences Shanghai People's Republic of China

2. Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing People's Republic of China

3. Yangtze Advanced Memory Industry Innovation Center Co., Ltd. Wuhan People's Republic of China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/inf2.12233

Reference39 articles.

1. Challenges and Applications of Emerging Nonvolatile Memory Devices

2. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing

3. An overview of phase-change memory device physics

4. Phase-Change Memory—Towards a Storage-Class Memory

5. Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materialsGe2Sb2Te5and GeTe

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