Reliability evaluation and redesign methodology for RFCMOS transceiver frontend circuits in sub‐6‐GHz band of fifth‐generation new radio communication based on the reliability model-Reference-Cited by-同舟云学术

Reliability evaluation and redesign methodology for RFCMOS transceiver frontend circuits in sub‐6‐GHz band of fifth‐generation new radio communication based on the reliability model

Published:2021-04-26 Issue:10 Volume:49 Page:3443-3454
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Int J Circ Theor Appl

Author:

Hsieh Chun‐Ting¹,Wang Shang‐Hsien¹,Yeh Chun‐Wei¹,Lin Wei‐Cheng¹^ORCID

Affiliation:

1. Electrical Engineering Department Chang‐Gung University Taoyuan Taiwan

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/cta.3027

Reference15 articles.

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4. IoannouDP TanY LoganR et al.Hot carrier effects on the RF performance degradation of nanoscale LNA SOI nFETs. 2018 IEEE International Reliability Physics Symposium (IRPS). Burlingame CA;2018:P‐TX.2‐1‐P‐TX.2‐3.

5. DoukkaliA LahbibI GamandP MartinP LesenechalD DescampsP.Reliability analysis of low noise amplifiers for wireless applications under high RF power stressing. International Conference on Advanced Technologies for Communications (ATC). Quy Nhon;2017:132‐135.

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