Broadband GaN HEMT distributed power amplifier design with phase adjustment-Reference-Cited by-同舟云学术

Broadband GaN HEMT distributed power amplifier design with phase adjustment

Author:

Yan Huan Hui¹^ORCID,Kumar Narendra¹,Latef Tarik Abdul¹,Yarman Binboga Siddik²,Grebennikov Andrei³

Affiliation:

1. Department of Electrical Engineering; University of Malaya; Lembah Pantai Kuala Lumpur 50603 Malaysia

2. Department of Electrical-Electronics Engineering; Istanbul University; Avcilar Istanbul 34320 Turkey

3. Sumitomo Electric Europe Ltd; Elstree Herts WD6 3SL United Kingdom

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Komiak JJ. Microwave Symposium (IMS), 2015 IEEE MTT-S International, Phoenix, AZ; 2015 1 3

2. Amin HY Özoğuz S Köprü R Yarman BS. nternational Conference on Knowledge-Based Engineering and Innovation (KBEI); 2015 91 94

3. Ulusoy AÇ Barisich C Pavlidis S Khan WT Papapolymerou J. 2014 44th European Microwave Conference; 2014 1285 1288

4. Andersson 2015 European Microwave Conference (EuMC); 2015 223 226

5. Kim B Greene M Osmus M. 014 IEEE MTT-S International Microwave Symposium (IMS2014); 2014 1 3

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