SIMS accurate determination of matrix composition of topological crystalline insulator material Pb1 − xSnxSe
Author:
Affiliation:
1. Institute of PhysicsPolish Academy of Sciences Warsaw Poland
2. Institute for Semiconductor and Solid State PhysicsJohannes Kepler University Linz Austria
3. Institute of Electron TechnologyPolish Academy of Science Warsaw Poland
Funder
Narodowe Centrum Nauki
Publisher
Wiley
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sia.6705
Reference7 articles.
1. Mechanism of the SIMS matrix effect
2. A new secondary ion mass spectrometry technique for III‐V semiconductor compounds using the molecular ions CsM+
3. Accurate Determination of the Matrix Composition Profile of Hg1–x Cd x Te by Secondary Ion Mass Spectrometry
4. Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer-thin layers
5. Quantification of SiGe layer composition using MCs+ and MCs2+ secondary ions in ToF-SIMS and magnetic SIMS
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1. Secondary ion mass spectrometry characterization of matrix composition in topological crystalline insulator Pb1−xSnxTe;Thin Solid Films;2023-09
2. Observation of Weyl and Dirac fermions at smooth topological Volkov-Pankratov heterojunctions;Physical Review B;2023-02-13
3. Effect of rapid thermal annealing on short period {CdO/ZnO}m SLs grown on m-Al2O3;Materials Science in Semiconductor Processing;2022-05
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