Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer-thin layers-Reference-Cited by-同舟云学术

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Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer-thin layers

Published:2016-06-29 Issue:2 Volume:49 Page:117-121
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Yunin P.A.¹²,Drozdov Yu.N.¹²,Drozdov M.N.¹²,Khrykin O.I.¹,Shashkin V.I.¹²

Affiliation:

1. Institute for Physics of Microstructures of the Russian Academy of Sciences; Nizhny Novgorod Russia

2. Lobachevsky State University of Nizhny Novgorod; Nizhny Novgorod Russia

Funder

Russian Foundation for Basic Research

Ministry of Education and Science of the Russian Federation

programs of the Presidium of the Russian Academy of Sciences

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference44 articles.

1. Effect of polarization fields on transport properties in AlGaN/GaN heterostructures

2. AlGaN/AlN/GaN high-power microwave HEMT

3. Study of the effects of an AlN interlayer on the transport properties of AlGaN∕AlN∕GaN heterostructures grown on SiC

4. High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

5. Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer

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1. Secondary ion mass spectrometry characterization of matrix composition in topological crystalline insulator Pb1−xSnxTe;Thin Solid Films;2023-09

2. Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach;Journal of Vacuum Science & Technology B;2023-04-19

3. Depth profiling of AlN and AlxGa1−xN crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source;Journal of Applied Physics;2023-01-17

4. All-epitaxial Al/AlGaN/GaN low-barrier Schottky diodes;Applied Physics Letters;2022-12-05

5. In-depth analyses of p-type silicon solar cells: A comparison between commercial compact and laboratory LIBS systems;Optik;2021-12

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