22%‐efficient Cd‐free Cu(In,Ga)(S,Se) 2 solar cell by all‐dry process using Zn 0.8 Mg 0.2 O and Zn 0.9 Mg 0.1 O:B as buffer and transparent conductive oxide layers-Reference-Cited by-同舟云学术

22%‐efficient Cd‐free Cu(In,Ga)(S,Se) 2 solar cell by all‐dry process using Zn 0.8 Mg 0.2 O and Zn 0.9 Mg 0.1 O:B as buffer and transparent conductive oxide layers

Published:2019-10-23 Issue:1 Volume:28 Page:79-89
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog Photovolt Res Appl

Author:

Chantana Jakapan¹²^ORCID,Kawano Yu¹,Nishimura Takahito³^ORCID,Kimoto Yoshinori⁴,Kato Takuya⁴^ORCID,Sugimoto Hiroki⁴,Minemoto Takashi¹

Affiliation:

1. Department of Electrical and Electronic EngineeringRitsumeikan University 1‐1‐1 Nojihigashi Kusatsu Shiga 525‐8577 Japan

2. Research Organization of Science and TechnologyRitsumeikan University 1‐1‐1 Nojihigashi Kusatsu Shiga 525‐8577 Japan

3. Ritsumeikan Global Innovation Research OrganizationRitsumeikan University 1‐1‐1 Nojihigashi Kusatsu Shiga 525‐8577 Japan

4. Atsugi Research Center, Advanced Technology Research LaboratoriesIdemitsu Kosan Co.,Ltd. Atsugi Kanagawa 243‐0206 Japan

Funder

New Energy and Industrial Technology Development Organization

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.3210

Reference32 articles.

1. Epitaxial Thin Film Crystalline Silicon Solar Cells on Low Cost Silicon Carriers

2. Effects of heavy alkali elements in Cu(In,Ga)Se 2 solar cells with efficiencies up to 22.6%

3. Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells

4. New world record Cu (In,Ga)(Se,S)2 thin film solar cell efficiency beyond 22%. 43rd;Kamada R;IEEE Photovoltaic Specialists Conference, Oregon, June,2016

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