P‐154: Enhanced Thermal Stability and High Color Accuracy in GaN‐on‐GaN Homoepitaxy Micro‐LEDs

Abstract

In the dynamic landscape of display technologies, the advent of Micro‐LEDs has sparked a revolutionary shift, promising unparalleled advancements in visual display capabilities. This study immerses itself in the realm of GaN‐based MicroLED devices, specifically delving into the nuanced effects of varying current density and temperature on the spectra of MicroLEDs with gallium nitride substrates. Through a meticulous comparative analysis, we unravel the optical distinctions between MicroLEDs utilizing gallium nitride and sapphire substrates. Additionally, our exploration extends to the examination of the diverse luminous intensity decay rates experienced by these devices under different substrate temperatures. The findings illuminate the pronounced optical advantages bestowed by gallium nitride substrates in GaN‐based MicroLEDs, providing pivotal insights for the ongoing refinement and enhancement of these cutting‐edge display technologies.