1. Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
2. Beyond the conventional transistor
3. Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
4. H. R. Huff, A. Agarwal, Y. Kim, L. Perrymore, D. Riley, J. Barnett, C. Sparks, M. Freiler, G. Gebara, B. Bowers, P. J. Chen, P. Lysaght, B. Nguyen, J. E. Lim, S. Lim, G. Bersuker, P. Zeitzoff, G. A. Brown, C. Young, B. Foran, F. Shaapur, A. Hou, C. Lim, H. Alshareef, S. Borthakur, D. J. Derro, R. Bergmann, L. A. Larson, M. I. Gardner, J. Gutt, R. W. Murto, K. Torres, M. D. Jackson, IWGI 2001, Jpn. Soc. Appl. Phys. 2001, pp. 2–11.
5. ITRS, International Technology Roadmap for Semiconductors 2004, http://public.itrs.net/ (accessed June 2007).