Planar Source Line-of-Sight Model with Automatically Adjusting Time Increment and Local Sticking Factors-Reference-Cited by-同舟云学术

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Planar Source Line-of-Sight Model with Automatically Adjusting Time Increment and Local Sticking Factors

Published:2009-09 Issue:7-9 Volume:15 Page:242-248
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Jilesen Jonathan,Lien Fue-Sang

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference22 articles.

1. Simplified Simulation of Step Coverage in Chemical Vapor Deposition with A Hemispherical Vapor Source Model

2. A unified line-of-sight model of deposition in rectangular trenches

3. Free molecular transport and deposition in long rectangular trenches

4. Multiscale modeling of chemical vapor deposition

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A method for coupling free molecular and continuum regime methods in order to simulate chemical vapor deposition;Computers & Fluids;2012-04

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