A method for coupling free molecular and continuum regime methods in order to simulate chemical vapor deposition-Reference-Cited by-同舟云学术

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A method for coupling free molecular and continuum regime methods in order to simulate chemical vapor deposition

Published:2012-04 Issue: Volume:59 Page:84-90
ISSN:0045-7930
Container-title:Computers & Fluids
language:en
Short-container-title:Computers & Fluids

Author:

Jilesen Jonathan,Lien Fue-Sang

Publisher

Elsevier BV

Subject

General Engineering,General Computer Science

Reference19 articles.

1. Multiscale modeling of chemical vapor deposition;Rodgers;J Appl Phys,1998

2. Mesoscopic scale modeling of microloading during low pressure chemical vapor deposition;Gobbert;J Electrochem Soc,1996

3. A multiscale simulator for low pressure chemical vapor deposition;Gobbert;J Electrochem Soc,1997

4. International Technology Roadmap for Semiconductor, 1999 edition. .

5. Modeling of film deposition for microelectronic applications;Cale,1996

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Designing Non-uniform Wafer Micro-topography for Macroscopic Uniformity in Multi-scale CVD Processes;Chemical Vapor Deposition;2014-10-13

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