AVD and ALD as Two Complementary Technology Solutions for Next Generation Dielectric and Conductive Thin-Film Processing
Author:
Publisher
Wiley
Subject
Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry
Reference33 articles.
1. Liquid Delivery of Low Vapor Pressure MOCVD Precursors
2. ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I: Processing
3. In-situ heteroepitaxial growth of CeO2/YBa 2Cu3O7 films on sapphire by injection CVD
Cited by 61 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth mechanism of HfO2 film on H-terminated Si (100) surface from atomic layer deposition process using tetrakis(ethylmethylamino)hafnium;Surfaces and Interfaces;2024-10
2. Electrical behavior of ALD-molybdenum films in the thin-film limit;2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS);2024-04-15
3. Titanium nitride (TiN) as a promising alternative to plasmonic metals: a comprehensive review of synthesis and applications;Materials Advances;2024
4. Designing Scalable and Energy-Efficient Computation: Magnetoelectric Spin-Orbit Circuitry;2023 International Conference on Power Energy, Environment & Intelligent Control (PEEIC);2023-12-19
5. A theoretical study of the atomic layer deposition of HfO2 on Si(1 0 0) surfaces using tetrakis(ethylmethylamino) hafnium and water;Applied Surface Science;2023-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3